Rare-earth doped AlxGa1-xAs

Rare-earth ions in III-V semiconductors are expected to be used as optical devices in near infrared region.

In our group, Yb-ion doped AlGaAs and its quantum structures are grown in molecular beam epitaxy. Performing optical properties measurements in extreme conditions of high magnetic fields and low temperatures, basic physical properties are clarified.

(LEFT) Intra-4f photoluminescence of Yb-doped AlxGa1-xAs thin films with different Al-contents.

(Right)Broad-band photoluminescence found in Yb-doped quantum well samples and magnetic oscillation.